Titre :	Electronic structure and magnetism of complex materials
Type de document :	texte imprimé
Auteurs :	Singh, David Joseph, Éditeur scientifique ; Papaconstantopoulos, Dimitrios A, Éditeur scientifique
Editeur :	Berlin : Springer
Année de publication :	2003
Collection :	Springer series in materials science, ISSN 0933-033X num. 54
Importance :	1 vol. (xiv-326 p.)
Présentation :	ill
Format :	25 cm
ISBN/ISSN/EAN :	978-3-540-43382-8
Langues :	Anglais (eng)
Catégories :	05-11-Physique des Matériaux.
Mots-clés :	Materiaux magnetiques  Magnetisme
Index. décimale :	621.3
Résumé :	Ferromagnetism occurs when Mn is randomly substituted for more than about 2 percent of the cations of several III–V compound semiconductors. Although only a few host materials have been explored at present, this property is likely shared by most III–V semiconductors. In this chapter we will discuss some of the theoretical pictures that are being developed to explain the magnetic and transport properties of these materials. Our development will be based on a phenomenological model that has been used with great success to explain the sensitivity of bulk and layered (II,Mn)VI semiconductor optical properties to external magnetic fields. (Ferromagnetism does not occur for Mn in undoped II–VI hosts.) The low energy degrees of freedom in this model are holes in the semiconductor valence band and one S = 5/2 local moment for each Mn ion.
En ligne :	https://link.springer.com/chapter/10.1007/978-3-662-05310-2_4
Permalink :	index.php?lvl=notice_display&id=522

Electronic structure and magnetism of complex materials [texte imprimé] / Singh, David Joseph, Éditeur scientifique ; Papaconstantopoulos, Dimitrios A, Éditeur scientifique . - Berlin : Springer, 2003 . - 1 vol. (xiv-326 p.) : ill ; 25 cm. - (Springer series in materials science, ISSN 0933-033X; 54) .
ISBN : 978-3-540-43382-8
Langues : Anglais (eng)

Catégories :	05-11-Physique des Matériaux.
Mots-clés :	Materiaux magnetiques  Magnetisme
Index. décimale :	621.3
Résumé :	Ferromagnetism occurs when Mn is randomly substituted for more than about 2 percent of the cations of several III–V compound semiconductors. Although only a few host materials have been explored at present, this property is likely shared by most III–V semiconductors. In this chapter we will discuss some of the theoretical pictures that are being developed to explain the magnetic and transport properties of these materials. Our development will be based on a phenomenological model that has been used with great success to explain the sensitivity of bulk and layered (II,Mn)VI semiconductor optical properties to external magnetic fields. (Ferromagnetism does not occur for Mn in undoped II–VI hosts.) The low energy degrees of freedom in this model are holes in the semiconductor valence band and one S = 5/2 local moment for each Mn ion.
En ligne :	https://link.springer.com/chapter/10.1007/978-3-662-05310-2_4
Permalink :	index.php?lvl=notice_display&id=522