Circuit design for reliability / Ricardo Reis

Public ISBD Titre : Circuit design for reliability Type de document : texte imprimé Auteurs : Ricardo Reis, Auteur ; Yu Cao, Auteur ; Gilson Wirth, Auteur Editeur : New York : Springer-Verlag Année de publication : 2015 Importance : 272 p. Présentation : couv. ill. en coul., ill. Format : 23 cm. ISBN/ISSN/EAN : 978-1-4614-4077-2 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-08 Microélectronique Résumé : This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units. The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management. Note de contenu : Contents: 1-Introduction 2-Recent Trends in Bias Temperature Instability 3-Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability 4-Atomistic Simulations on Reliability 5-On-Chip Characterization of Statistical Device Degradation 6-Compact Modeling of BTI for Circuit Reliability Analysis 7-Circuit Resilience Roadmap 8-Layout Aware Electromigration Analysis of Power/Ground Networks 9-Power-Gating for Leakage Control and Beyond 10-Soft Error Rate and Fault Tolerance Techniques for FPGAs 11-Low Power Robust FinFET-Based SRAM Design in Scaled Technologies 12-Variability-Aware Clock Design Circuit design for reliability [texte imprimé] / Ricardo Reis, Auteur ; Yu Cao, Auteur ; Gilson Wirth, Auteur . - New York : Springer-Verlag, 2015 . - 272 p. : couv. ill. en coul., ill. ; 23 cm. ISBN : 978-1-4614-4077-2 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-08 Microélectronique Résumé : This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units. The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management. Note de contenu : Contents: 1-Introduction 2-Recent Trends in Bias Temperature Instability 3-Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability 4-Atomistic Simulations on Reliability 5-On-Chip Characterization of Statistical Device Degradation 6-Compact Modeling of BTI for Circuit Reliability Analysis 7-Circuit Resilience Roadmap 8-Layout Aware Electromigration Analysis of Power/Ground Networks 9-Power-Gating for Leakage Control and Beyond 10-Soft Error Rate and Fault Tolerance Techniques for FPGAs 11-Low Power Robust FinFET-Based SRAM Design in Scaled Technologies 12-Variability-Aware Clock Design

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CMOS capacitive sensors for lab-on-chip applications / Ebrahim Ghafar-Zadeh

Public ISBD Titre : CMOS capacitive sensors for lab-on-chip applications : a multidisciplinary approach Type de document : texte imprimé Auteurs : Ebrahim Ghafar-Zadeh, Auteur ; Mohamad Sawan, Auteur Editeur : New York : Springer-Verlag Année de publication : 2010 Collection : Analog Circuits and Signal Processing Importance : 146 p. Présentation : couv. ill. en coul., ill. Format : 24 cm. ISBN/ISSN/EAN : 978-90-481-3726-8 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-09 capteurs Résumé : Laboratory-on-Chip (LoC) is a multidisciplinary approach toward the miniaturization, integration and automation of biological assays. A biological laboratory contains various pieces of equipment used for performing a variety of biological protocols. The engineering aspect of LoC design is aiming to embed all these components in a single chip for single-purpose applications. LoC is a young discipline which is expected to subsequently expand over the next few years, stimulated by considerable development of applications in the mechanical, biochemical and electrical engineering domains. Among various microelectronic devices employed for LoC applications, CMOS capacitive sensors have received a significant interest for several applications including DNA detection, antibody-antigen recognition and bacteria growth monitoring. The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies, main important biological capacitive interfaces and the required microfluidic fabrication procedures to create capacitive biosensor through standard CMOS process. Note de contenu : Contents: 1-Introduction 2-Capacitive Sensing Electrodes 3-Capacitive Bio-interfaces 4-Capacitive Interface Circuits for LoC Applications 5-Microfluidic Packaging Process 6-Current Technology and Future Works CMOS capacitive sensors for lab-on-chip applications : a multidisciplinary approach [texte imprimé] / Ebrahim Ghafar-Zadeh, Auteur ; Mohamad Sawan, Auteur . - New York : Springer-Verlag, 2010 . - 146 p. : couv. ill. en coul., ill. ; 24 cm.. - (Analog Circuits and Signal Processing) . ISBN : 978-90-481-3726-8 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-09 capteurs Résumé : Laboratory-on-Chip (LoC) is a multidisciplinary approach toward the miniaturization, integration and automation of biological assays. A biological laboratory contains various pieces of equipment used for performing a variety of biological protocols. The engineering aspect of LoC design is aiming to embed all these components in a single chip for single-purpose applications. LoC is a young discipline which is expected to subsequently expand over the next few years, stimulated by considerable development of applications in the mechanical, biochemical and electrical engineering domains. Among various microelectronic devices employed for LoC applications, CMOS capacitive sensors have received a significant interest for several applications including DNA detection, antibody-antigen recognition and bacteria growth monitoring. The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies, main important biological capacitive interfaces and the required microfluidic fabrication procedures to create capacitive biosensor through standard CMOS process. Note de contenu : Contents: 1-Introduction 2-Capacitive Sensing Electrodes 3-Capacitive Bio-interfaces 4-Capacitive Interface Circuits for LoC Applications 5-Microfluidic Packaging Process 6-Current Technology and Future Works

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Fundamentals of semiconductor lasers / Takahiro Numai

Public ISBD Titre : Fundamentals of semiconductor lasers Type de document : texte imprimé Auteurs : Takahiro Numai, Auteur Editeur : New York : Springer-Verlag Année de publication : 2004 Collection : Optical Sciences Importance : 259 p. Présentation : couv. ill. en coul. Format : 24 cm. ISBN/ISSN/EAN : 978-0-387-40836-3 Langues : Anglais (eng) Catégories : PHYSIQUE Mots-clés : Anti-guiding Waveguide  Control of Lateral Mode  DFB-LD  Distributed Feedback Laser Diode  Longitudinal Mode in Laser  Optical Phase-shift  Semiconductor Laser using Diffraction Gratings  Transverse Mode in Laser Index. décimale : 05-06 Optique Résumé : Fundamentals of Semiconductor Lasers explains the physics and fundamental characteristics of semiconductor lasers with regards to systems applications. The detailed and comprehensive presentation is unique in that it encourages the reader to consider different semiconductor lasers from different angles. Emphasis is placed on recognizing common concepts such operating principles and structure, and solving problems based on individual situations. The treatment is enhanced by an historical account of advances in semiconductor lasers over the years, discussing both those ideas that have both persisted over the years and those that have faded out. The first four chapters cover the basics of semiconductors, including band structures, optical transitions, optical waveguides, and optical resonators. The remaining chapters discuss operating principles and basic characteristics of semiconductor lasers, and advanced topics including dynamics single-mode lasers, quantum well lasers, and control of spontaneous emission. The reader need only be familiar with undergraduate-level electromagnetism and quantum mechanics. After reading this book, the student will be able to think critically about semiconductor lasers, and be able to read and understand journal papers in the field. This book will be essential to any advanced undergraduate or graduate student of semiconductor lasers, and any professional physicist or engineer looking for a good overview of the subject. Note de contenu : CONTENTS 1 Band Structures 2 Optical Transitions 3 Optical Waveguides 4 Optical Resonators 5 Fundamentals of Semiconductor Lasers 6 Dynamic Single-Mode LDs 7 Quantum Well LDs 8 Control of Spontaneous Emission A Cyclotron resonance B Time-independent perturbation theory C Time-dependent perturbation theory D Te mode and TM mode E Characteristic matrix in discrete approach F Free carrier absorption and plasma effect G Relative intensity noise RIN Index Fundamentals of semiconductor lasers [texte imprimé] / Takahiro Numai, Auteur . - New York : Springer-Verlag, 2004 . - 259 p. : couv. ill. en coul. ; 24 cm.. - (Optical Sciences) . ISSN : 978-0-387-40836-3 Langues : Anglais (eng) Catégories : PHYSIQUE Mots-clés : Anti-guiding Waveguide  Control of Lateral Mode  DFB-LD  Distributed Feedback Laser Diode  Longitudinal Mode in Laser  Optical Phase-shift  Semiconductor Laser using Diffraction Gratings  Transverse Mode in Laser Index. décimale : 05-06 Optique Résumé : Fundamentals of Semiconductor Lasers explains the physics and fundamental characteristics of semiconductor lasers with regards to systems applications. The detailed and comprehensive presentation is unique in that it encourages the reader to consider different semiconductor lasers from different angles. Emphasis is placed on recognizing common concepts such operating principles and structure, and solving problems based on individual situations. The treatment is enhanced by an historical account of advances in semiconductor lasers over the years, discussing both those ideas that have both persisted over the years and those that have faded out. The first four chapters cover the basics of semiconductors, including band structures, optical transitions, optical waveguides, and optical resonators. The remaining chapters discuss operating principles and basic characteristics of semiconductor lasers, and advanced topics including dynamics single-mode lasers, quantum well lasers, and control of spontaneous emission. The reader need only be familiar with undergraduate-level electromagnetism and quantum mechanics. After reading this book, the student will be able to think critically about semiconductor lasers, and be able to read and understand journal papers in the field. This book will be essential to any advanced undergraduate or graduate student of semiconductor lasers, and any professional physicist or engineer looking for a good overview of the subject. Note de contenu : CONTENTS 1 Band Structures 2 Optical Transitions 3 Optical Waveguides 4 Optical Resonators 5 Fundamentals of Semiconductor Lasers 6 Dynamic Single-Mode LDs 7 Quantum Well LDs 8 Control of Spontaneous Emission A Cyclotron resonance B Time-independent perturbation theory C Time-dependent perturbation theory D Te mode and TM mode E Characteristic matrix in discrete approach F Free carrier absorption and plasma effect G Relative intensity noise RIN Index

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High-Frequency Bipolar Transistors / M. Reisch

Public ISBD Titre : High-Frequency Bipolar Transistors : Physics, Modelling, Applications Type de document : texte imprimé Auteurs : M. Reisch, Auteur Editeur : New York : Springer-Verlag Année de publication : 2003 Importance : 658 p. Présentation : couv. ill. en coul., ill. Format : 24 cm. ISBN/ISSN/EAN : 978-3-540-67702-4 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-04 Technologie de composants Résumé : The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications. Note de contenu : Table of contents: 1-An Introductory Survey 2-Semiconductor Physics Required for Bipolar-Transistor Modeling 3-Physics and Modeling of Bipolar Junction Transistors 4-Physics and Modeling of Heterojunction Bipolar Transistors 5-Noise Modeling 6-Basic Circuit Configurations 7-Process Integration 8-Applications High-Frequency Bipolar Transistors : Physics, Modelling, Applications [texte imprimé] / M. Reisch, Auteur . - New York : Springer-Verlag, 2003 . - 658 p. : couv. ill. en coul., ill. ; 24 cm. ISBN : 978-3-540-67702-4 Langues : Anglais (eng) Catégories : ELECTRONIQUE Index. décimale : 09-04 Technologie de composants Résumé : The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications. Note de contenu : Table of contents: 1-An Introductory Survey 2-Semiconductor Physics Required for Bipolar-Transistor Modeling 3-Physics and Modeling of Bipolar Junction Transistors 4-Physics and Modeling of Heterojunction Bipolar Transistors 5-Noise Modeling 6-Basic Circuit Configurations 7-Process Integration 8-Applications

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Limit theorems of probability theory / Yu. V. Prokhorov

Public ISBD Titre : Limit theorems of probability theory Type de document : texte imprimé Auteurs : Yu. V. Prokhorov, Auteur ; V. Statulevicius, Auteur Editeur : New York : Springer-Verlag Année de publication : 2000 Importance : 273 p. Présentation : couv. ill. en coul. Format : 24 cm. ISBN/ISSN/EAN : 978-3-540-57045-4 Langues : Anglais (eng) Catégories : MATHEMATIQUES Mots-clés : Limit theorems,Markov chain,Normal distribution,Probability theory,Random variable,large deviations Index. décimale : 04-05 Probabilité et statistique Résumé : This book consists of five parts written by different authors devoted to various problems dealing with probability limit theorems. The first part, "Classical-Type Limit Theorems for Sums ofIndependent Random Variables" (V.v. Petrov), presents a number of classical limit theorems for sums of independent random variables as well as newer related results. The presentation dwells on three basic topics: the central limit theorem, laws of large numbers and the law of the iterated logarithm for sequences of real-valued random variables. The second part, "The Accuracy of Gaussian Approximation in Banach Spaces" (V. Bentkus, F. G6tze, V. Paulauskas and A. Rackauskas), reviews various results and methods used to estimate the convergence rate in the central limit theorem and to construct asymptotic expansions in infinite-dimensional spaces. The authors con­ fine themselves to independent and identically distributed random variables. They do not strive to be exhaustive or to obtain the most general results; their aim is merely to point out the differences from the finite-dimensional case and to explain certain new phenomena related to the more complex structure of Banach spaces. Also reflected here is the growing tendency in recent years to apply results obtained for Banach spaces to asymptotic problems of statistics. Note de contenu : Contents I Classical-Type Limit Theorems for Sums of Independent Random Variables II The Accuracy of Gaussian Approximation in Banach Spaces III Approximation of Distributions of Sums of Weakly Dependent Random Variables by the Normal Distribution IV Refinements of the Central Limit Theorem for Homogeneous Markov Chains V Limit Theorems on Large Deviations Limit theorems of probability theory [texte imprimé] / Yu. V. Prokhorov, Auteur ; V. Statulevicius, Auteur . - New York : Springer-Verlag, 2000 . - 273 p. : couv. ill. en coul. ; 24 cm. ISSN : 978-3-540-57045-4 Langues : Anglais (eng) Catégories : MATHEMATIQUES Mots-clés : Limit theorems,Markov chain,Normal distribution,Probability theory,Random variable,large deviations Index. décimale : 04-05 Probabilité et statistique Résumé : This book consists of five parts written by different authors devoted to various problems dealing with probability limit theorems. The first part, "Classical-Type Limit Theorems for Sums ofIndependent Random Variables" (V.v. Petrov), presents a number of classical limit theorems for sums of independent random variables as well as newer related results. The presentation dwells on three basic topics: the central limit theorem, laws of large numbers and the law of the iterated logarithm for sequences of real-valued random variables. The second part, "The Accuracy of Gaussian Approximation in Banach Spaces" (V. Bentkus, F. G6tze, V. Paulauskas and A. Rackauskas), reviews various results and methods used to estimate the convergence rate in the central limit theorem and to construct asymptotic expansions in infinite-dimensional spaces. The authors con­ fine themselves to independent and identically distributed random variables. They do not strive to be exhaustive or to obtain the most general results; their aim is merely to point out the differences from the finite-dimensional case and to explain certain new phenomena related to the more complex structure of Banach spaces. Also reflected here is the growing tendency in recent years to apply results obtained for Banach spaces to asymptotic problems of statistics. Note de contenu : Contents I Classical-Type Limit Theorems for Sums of Independent Random Variables II The Accuracy of Gaussian Approximation in Banach Spaces III Approximation of Distributions of Sums of Weakly Dependent Random Variables by the Normal Distribution IV Refinements of the Central Limit Theorem for Homogeneous Markov Chains V Limit Theorems on Large Deviations

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Logic Synthesis and Verification Algorithms / Gary D. Hachtel

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A modern introduction to probability and statistics / F. M. Dekking

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Morphological image analysis / Pierre Soille

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Offset Reduction Techniques in High-Speed Analog-to-Digital Converters / Pedro M. Figueiredo

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Partial differential equations Vol. IV / Yu. V. Egorov

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Partial differential equations Vol. VI / Yu. V. Egorov

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Probability for Statisticians / Galen R. Shorack

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Probability theory Vol. III / Yu. V. Prokhorov

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Random number generation and Monte Carlo methods / James E. Gentle

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Several complex variables Vol. VII / H. Grauert

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